| 000 | 00652nam a22002057a 4500 | ||
|---|---|---|---|
| 999 |
_c21905 _d21905 |
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| 005 | 20191007160132.0 | ||
| 008 | 190927b ||||| |||| 00| 0 eng d | ||
| 041 | _aeng | ||
| 082 | _a537.622 Sy13p | ||
| 100 | _aSyassen, Karl | ||
| 245 |
_aProceedings of the Seventh International Conference on High Pressure Semiconductor Physics HPSP-VII _bJuly 28 to 31, 1996, Schwabisch Gmund, Germany _cKarl Syassen |
||
| 260 |
_aGermany _bTheoria Cum Praxi _c1996 |
||
| 300 | _a568p. | ||
| 500 | _avol. 198 no. 1 | ||
| 650 | _aSemiconductor | ||
| 650 | _aHigh pressure | ||
| 700 | _aStradling, R. Anthony | ||
| 700 | _aGoni, Alejandro R. | ||
| 942 | _cBK | ||